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2009
Conference Paper
Titel
Comparison of bonding kinetics for borosilicate glass and silicon wafers by in situ fracture surface energy measurements during annealing
Abstract
This paper presents the results of surface energy y measurements performed in situ during annealing for direct bonding. First results concerning thy y(t) behavior for atmospheric pressure plasma pre- treatments of silicon wafers compared to Borofloat glass wafers will be presented.