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2009
Journal Article
Titel
Continuous-wave, room-temperature operation of 2-µm Sb-based optically-pumped vertical-external-cavity surface-emitting laser monolithically grown on GaAs substrates
Abstract
We report on continuous-wave, room-temperature operation at 2.014 mu m of Sb-based optically-pumped vertically-external-cavity surface-emitting lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) growth mode. The IMF is characterized by a periodic array of 90 degrees misfit dislocation and enables the relaxed GaSb growth with a low dislocation density on lattice-mismatched GaAs after the growth of only a few monolayers of GaSb. A maximum output power of >100 mW is obtained at -5 degrees C.
Author(s)