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Comparing measurement setups to determine the frequency response of Ge on Si p-i-n photodiodes up to 40 GHz

 
: Klinger, S.; Berroth, M.; Kaschel, M.; Oehme, M.; Kasper, E.; Hurm, V.

5th Joint Symposium on Opto- & Micro-electronic Devices and Circuits, SODC 2009 : Beijing, May 9-15, 2009
Beijing, 2009
pp.155-158
Joint Symposium on Opto- & Micro-electronic Devices and Circuits (SODC) <5, 2009, Peking>
English
Conference Paper
Fraunhofer IAF ()

Abstract
Fast Ge on Si p-i-n photodiodes are fabricated and their opto-electrical transfer functions are measured up to 40 GHz. For the measurements two methods are applied, namely a network analyzer setup and a heterodyne measurement setup.

: http://publica.fraunhofer.de/documents/N-113313.html