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  4. Comparing measurement setups to determine the frequency response of Ge on Si p-i-n photodiodes up to 40 GHz
 
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2009
Conference Paper
Title

Comparing measurement setups to determine the frequency response of Ge on Si p-i-n photodiodes up to 40 GHz

Abstract
Fast Ge on Si p-i-n photodiodes are fabricated and their opto-electrical transfer functions are measured up to 40 GHz. For the measurements two methods are applied, namely a network analyzer setup and a heterodyne measurement setup.
Author(s)
Klinger, S.
Berroth, M.
Kaschel, M.
Oehme, M.
Kasper, E.
Hurm, V.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
5th Joint Symposium on Opto- & Micro-electronic Devices and Circuits, SODC 2009  
Conference
Joint Symposium on Opto- & Micro-electronic Devices and Circuits (SODC) 2009  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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