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Wide band gap based MEMS for harsh environment applications

: Cimalla, V.; Lebedev, V.; Röhlig, C.-C.; Ambacher, O.; Niebelschütz, F.; Tonisch, K.; Pezoldt, J.; Brueckner, K.; Hein, M.

Univ. Politecnica de Madrid:
WOCSDICE 2009, 33st Workshop on Compound Semiconductor Devices and Integrated Circuits : Held in Malaga, Spain, in May 17-20, 2009
Malaga, 2009
Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) <33, 2009, Malaga>
Conference Paper
Fraunhofer IAF ()
microelectromechanical system; sensor; wide band gap semiconductors; SiC; GaN; AlN

With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are receiving more attention. The outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we will demonstrate the basic technology for group III nitrides and SiC with a special focus on the fabrication of three-dimensional AlGaN/GaN heterostructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors will be described. A special attention is drawn on the implementation of the 2DEG in all-nitride based MEMS.