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Field emission characteristics of 2D hole accumulation layer on H-terminated CVD diamond

: Yamada, T.; Nebel, C.E.; Shikata, S.


Institute of Electrical and Electronics Engineers -IEEE-:
22nd International Vacuum Nanoelectronics Conference, IVNC 2009 : 20-24 July 2009, Hamamatsu/Japan
New York, NY: IEEE, 2009
ISBN: 978-1-4244-3588-3
ISBN: 978-1-4244-3587-6
International Vacuum Nanoelectronics Conference (IVNC) <22, 2009, Hamamatsu/Japan>
Conference Paper
Fraunhofer IAF ()

Field emission properties from 2D-hole accumulation layers on H-terminated undoped intrinsic CVD diamonds were measured. We also measured field emission properties of pand n-type semiconducting diamonds with H-terminations. Plateau in field emission properties of undoped intrinsic diamond were observed, while no pand n-type diamonds showed continuous increase of emission currents. It was considered that the discrete energy levels of hole existed in the 2D-hole accumulation layer on high quality CVD diamond films. Our results indicated that 2D-hole accumulation layer on high quality CVD diamond films was one of the candidates of field emitter materials having narrow energy range electron beams.