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Mask diffraction analysis and optimization for EUV masks

: Erdmann, A.; Evanschitzky, P.; Fühner, T.


Schellenberg, F.M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Alternative lithographic technologies. Proceedings. Pt. 1 : 24 - 26 February 2009, San Jose, California, United States
Bellingham, WA: SPIE, 2009 (SPIE Proceedings 7271)
ISBN: 978-0-8194-7524-4
Paper 72711E
Conference on Alternative Lithographic Technologies <2009, San Jose/Calif.>
Conference Paper
Fraunhofer IISB ()
EUV lithography; simulation; mask topography; mask induced aberration

This paper employs a direct analysis of the intensity and the phase of the diffracted light by rigorous electromagnetic field (EMF) simulations to investigate mask-induced imaging artifacts in EUV-lithography. Analysis of the diffraction efficiencies and phase differences between the diffraction orders versus mask and illumination parameters is used to explore EUV-specific imaging artifacts such as feature orientation dependent placement errors and feature sizes, shifts of the best focus position, process window asymmetries, and other aberration-like phenomena. The results of these simulations aim to understand the reason for these EUV-specific imaging artifacts and to devise strategies for their compensation. Finally, rigorous EMF models of light scattering from EUV-masks are applied to i dentify ideal mask absorber stacks using global optimization techniques.