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Efficient analysis of three dimensional EUV mask imaging artifacts using the waveguide decomposition method

: Shao, F.; Evanschitzky, P.; Fühner, T.; Erdmann, A.


Zurbrick, L.S. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Photomask Technology 2009 : Monterey, CA, USA, 15 September 2009
Bellingham, WA: SPIE, 2009 (Proceedings of SPIE 7488)
ISBN: 978-0-8194-7795-8
Paper 74882C
Conference "Photomask Technology" <2009, Monterey/Calif.>
Conference Paper
Fraunhofer IISB ()
EUV lithography; simulation; mask topography; mask induced aberration

This paper employs the Waveguide decomposition method as an efficient rigorous electromagnetic field (EMF) solver to investigate three dimensional mask-induced imaging artifacts in EUV lithography. The major mask diffraction induced imaging artifacts are first identified by applying the Zernike analysis of the mask nearfield spectrum of 2D lines/spaces. Three dimensional mask features like 22nm semidense/dense contacts/posts, isolated elbows and line-ends are then investigated in terms of lithographic results. After that, the 3D mask-induced imaging artifacts such as feature orientation dependent best focus shift, process window asymmetries, and other aberration-like phenomena are explored for the studied mask features. The simulation results can help lithographers to understand the reason s of EUV-specific imaging artifacts and to devise illumination and feature dependent strategies for their compensation in the optical proximity correction (OPC) for EUV masks. At last, an efficient approach using the Zernike analysis together with the Waveguide decomposition technique is proposed to characterize the impact of mask properties for the future OPC process.