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A 300 GHz mHEMT amplifier module

Ein 300 GHz-MHEMT-Verstärker-Modul
 
: Tessmann, A.; Leuther, A.; Hurm, V.; Massler, H.; Zink, M.; Kuri, M.; Riessle, M.; Lösch, R.; Schlechtweg, M.; Ambacher, O.

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IEEE Photonics Society:
IPRM 2009, IEEE International Conference on Indium Phosphide & Related Materials. Proceedings : Newport Beach, CA, USA, 10-14 May 2009
Piscataway, NJ: IEEE, 2009
ISBN: 1-4244-3432-7
ISBN: 978-1-4244-3432-9
ISBN: 978-1-4244-3433-6
pp.196-199
International Conference on Indium Phosphide and Related Materials (IPRM) <21, 2009, Newport Beach/Calif.>
English
Conference Paper
Fraunhofer IAF ()
H-band; submillimeter-wave monolithic integrated circuit; S-MMIC; amplifier module; metamorphic HEMT; packaging; monolithisch integrierte Submillimeterwellen-Schaltkreise; Verstärkermodul; metamorpher HEMT; Aufbautechnik

Abstract
In this paper, we present the development of an H-band (220 - 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module for use in next generation active and passive high-resolution imaging systems operating around 300 GHz. Therefore, a variety of compact amplifier circuits has been realized by using an advanced 35 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide (GCPW) circuit topology. A single-stage cascode design achieved a small-signal gain of 5.6 dB at 300 GHz and a linear gain of more than 5 dB between 258 and 308 GHz. Additionally, a four-stage amplifier S-MMIC based on conventional devices in common-source configuration was realized, demonstrating a maximum gain of 15.6 dB at 276 GHz and a linear gain of more than 12 dB over the frequency range from 264 to 300 GHz. Finally, mounting and packaging of the monolithic amplifier chips into H-band waveguide modules was accomplished with only minor reduction in circuit performance.

: http://publica.fraunhofer.de/documents/N-111478.html