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Ferroelectric relaxor behavior and microwave dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films grown by radio frequency magnetron sputtering

: Xu, J.; Zhou, D.; Menesklou, W.; Ivers-Tiffee, E.


Journal of applied physics 106 (2009), No.7, Art. 074107, 5 pp.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer CNT ()

Epitaxial Ba(Zr0.3Ti0.7)O-3 thin films were grown by radio frequency magnetron sputtering on (100) MgO substrate. Dielectric measurements at low frequencies (10 Hz-1 MHz) indicate that the material is a ferroelectric relaxor in nature. The temperature dependence of relative permittivity (epsilon(r)) follows the modified Curie-Weiss law and the frequency dispersion of transition temperature can be described using the Vogel-Fulcher relation. Measured at 100 kHz, the tunability (tau) and figure of merit are comparable to (Ba, Sr)TiO3 thin films. In the microwave frequency region (1-50 GHz), the frequency dependence of permittivity and the loss tan delta (12%-21%) make the Ba (Zr0.3Ti0.7)O-3 thin films unfeasible for practical tunable devices.