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Surface amorphization, sputter rate, and intrinsic stresses of silicon during low energy Ga+ focused-ion beam milling

: Pastewka, L.; Salzer, R.; Graff, A.; Altmann, F.; Moseler, M.

Preprint urn:nbn:de:0011-n-1113727 (816 KByte PDF)
MD5 Fingerprint: 4f619daebe7c3ab89e9fc0c6b60758fd
Created on: 25.3.2011

Wang, T.:
Computer simulation of radiation effects in solids. Ninth International Conference on Computer Simulation of Radiation Effects in Solids, COSIRES 2008. Proceedings : Beijing, China, 12 - 17 October 2008
Amsterdam: Elsevier, 2009 (Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms 267.2009, Nr.18)
ISSN: 0168-583X
International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES) <9, 2008, Beijing>
Conference Paper, Journal Article, Electronic Publication
Fraunhofer IWM ()
Fraunhofer IWM ( Fraunhofer IWM-H) ()
surface amorphization; focused ion beam milling; molecular dynamic; silicon

Transmission electron microscopy (TEM) is a standard technique to characterize microelectronic device structures. As structures shrink to the nanoscale, surface damage produced by focused ion beam (FIB) sample preparation destroying the region of interest and degrading the resolution of TEM images becomes increasingly a problem. The thickness of the damaged layer at the sidewalls of a prepared cross section is around 20-30 nm for silicon at typical beam energies of 30 keV. In order to reduce these artifacts to a minimum low beam energies have been proposed for FIB polishing. We use a combination of molecular dynamics simulations and experiments to assess the influence of the focused ion beam on the surface structure of silicon for beam energies ranging from 1-5 keV and a grazing angle of 100 typically used in low voltage FIB polishing. Under these conditions, the thickness of the amorphous layer depends linearly on the beam energy. Intrinsic surface stresses introduced by FIB are always tensile and of a magnitude of around 1 GPa.