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A maskless laser-write lithography processing of thin-film transistors on a hemispherical surface

: Yoo, G.; Lee, H.; Radtke, D.; Stumpf, M.; Zeitner, U.; Kanicki, J.


Microelectronic engineering 87 (2010), No.1, pp.83-87
ISSN: 0167-9317
Journal Article
Fraunhofer IOF ()
maskless lithography; thin-film transistor; non-planar surface

We report on the design and fabrication methods for a hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a non-planar substrate using laser-write lithography (LWL). Level-to-level alignment with a high accuracy is demonstrated using LWL method. The fabricated a-Si:H TFT exhibits a field-effect mobility of 0.27 cm2/V s, threshold voltage of 4.9 V and on/off current ratio of not, vert, similar6 × 106 in a saturation regime. The obtained results demonstrate that it is possible to fabricate the a-Si:H TFTs and complex circuitry on a curved surface, using a well-established a-Si:H TFT technology in combination with the maskless lithography, for hemispherical or non-planar sensor arrays.