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PD-SOI MOSFETs: Interface effect on point defects and doping profiles

PD-SOI MOSFETs: Effekte der Grenzschicht auf Punktdefekte und Dotieratomprofile
: Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International SOI Conference 2009 : 5-8 Oct. 2009, Foster City, California, USA
New York, NY: IEEE, 2009
ISBN: 978-1-4244-5232-3
ISBN: 978-1-4244-4256-0
2 pp.
International SOI Conference <2009, Foster City/Calif.>
Conference Paper
Fraunhofer IISB ()
SOI; point defects; process simulation

In this work, the influence of the Silicon/Buried Oxide interface (Si/BOX) on the electrical characteristics of Silicon-On-Insulator (SOI) MOSFETs is investigated by means of numerical simulations. Considering the State-of-Art dopant diffusion models and the recombining effect of Si/BOX interface on point defect, process simulations were performed to investigate the two-dimensional diffusion behaviour of the dopant impurities. The impact of the Si/BOX is investigated by analyzing the standard electrical characteristics of CMOS devices. Finally, a new electrical characterization methodology is detailed to better analyze dopants lateral diffusion profiles.