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High performance compound semiconductor devices and integrated circuits for advanced communication, sensor, and imaging applications
: Schlechtweg, M.; Makon, R.E.; Hurm, V.; Driad, R.; Tessmann, A.; Kallfass, I.; Leuther, A.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.
The Fraunhofer IAF developed a variety of advanced mixed-signal monolithic integrated circuits (ICs), intended for use in future 100 Gbit/s optical communication systems (Ethernet), as well as millimeter-wave monolithic integrated circuits (MMICs) and modules for application in active and passive high-resolution imaging systems operating beyond 200 GHz. The mixed-signal ICs are manufactured using a state-of-the-art InP double heterojunction bipolar transistor (DHBT) technology. The MMICs are based on an advanced metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide (GCPW) circuit topology. Examples of high-performance circuits from both technologies are presented in this paper.