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GaSb-based optically pumped semiconductor disk laser using multiple gain elements

: Rösener, B.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.


IEEE Photonics Technology Letters 21 (2009), No.13, pp.848-850
ISSN: 1041-1135
Journal Article
Fraunhofer IAF ()
GaSb-based; high power; mid-infrared; power scaling; semiconductor disk laser (SDL); VECSEL; vertical-external-cavity surface-emitting laser

We report on the realization of an optically pumped semiconductor disk laser (SDL) emitting at 2.25- m wavelength with a cavity containing two separately pumped (AlGaIn)(AsSb) gain chips. Compared to single-chip SDLs, the dual-chip configuration allows launching a significantly larger amount of total pump power into the laser chips prior to reaching thermal rollover of the output power characteristics. At a chip submount temperature of 20 C, a maximum continuous-wave output power of 3.3 W was achieved in this way for an absorbed pump power of 30 W. A detailed analysis of the lasing characteristics of the dual-chip SDL revealed increased round-trip losses due to the increased number of cavity elements. However, a reduction of the slope efficiency could be circumvented by increasing the output coupling mirror transmittance.