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2007
Conference Paper
Titel
Survey on very fast TLP and ultra fast repetitive pulsing for characterization in the CDM-domain
Abstract
Charged device model pulses may be less than 1 ns wide with peak currents exceeding 10 A. They are a true challenge for the ESD protection of advanced technologies with shrinking safety margins. This paper surveys the characterization with very fast rising single shot TLP pulses and the CDM-like stress, if the square pulse is injected into an integrated circuit via a single pin. Complementing the high-voltage VF-TLP, repetitive medium voltage techniques with ps-rise times are necessary to meet the CDM-goals.