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Properties of vacancies in silicon determined from laser-annealing experiments

Bestimmung der Eigenschaften von Gitterleerstellen in Silicium aus Laserausheilungsexperimenten
: Pichler, P.

Baccarani, G.:
ESSDERC 2002. Proceedings of the 32nd European Solid-State Device Research Conference : 24-26 September 2002 Firenze, Italy
Bologna: University of Bologna, 2002
ISBN: 88-900847-8-2
European Solid-State Device Research Conference (ESSDERC) <32, 2002, Firenze>
Conference Paper
Fraunhofer IIS B ( IISB) ()
silicium; Gitterleerstelle; Gleichgewichtskonzentration; Diffusionskoeffizient; Laserausheilung

In a series of experiments, Chantre et al. measured vacancy--phosphorus pairs after laser annealing of silicon samples. These experiments were reproduced by numerical simulations of the diffusion and recombination of vacancies and self--interstitials and the interaction of vacancies with phosphorus atoms. The simulations lead to a range of possible values for the equilibrium concentration of vacancies.