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Design of X-band GaN MMICs using field plates

: Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Peschel, D.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M.

Gallium Arsenide Application Symposium Association -GAAS-; European Microwave Association:
4th European Microwave Integrated Circuits Conference, EuMIC 2009. Proceedings. CD-ROM : Held from 28 to 29 September 2009 in Rome, Italy, as part of the European Microwave Week
London: Horizon House, 2009
ISBN: 978-2-87487-012-5
European Microwave Integrated Circuits Conference (EuMIC) <4, 2009, Rome>
European Microwave Week <2009, Rome>
Conference Paper
Fraunhofer IAF ()

Two field plate variants of AlGaN/GaN-HEMTs with and without source-connected field plate ("shield") were analyzed for the design of efficient High-Power-Amplifier MMICs operating at X-Band frequencies. This paper presents the design and realization of three dual-stage microstrip MMICs using different device variants for narrowband and broadband applications. Two narrowband HPAs, using GaN HEMTs with and without shield, achieve a maximum output power and PAE of 20 W and >39 %, respectively. A broadband amplifier containing GaN HEMTs without shield reaches a simulated output power beyond 12 W with >30 % PAE over 9-11 GHz.