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Large-area terahertz emitters based on GaInAsN

Großflächige Terahertzemitter auf der Basis von GaInAsN
: Peter, F.; Winnerl, S.; Schneider, H.; Helm, M.; Köhler, K.


Serpenguzel, A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Photonic Materials, Devices, and Applications III : Dresden, Germany, May 4th, 2009
Bellingham, WA: SPIE, 2009 (Proceedings of SPIE 7366)
ISBN: 978-0-8194-7640-1
ISBN: 0-8194-7640-4
Paper 73661R
Conference "Photonic Materials, Devices, and Applications" <3, 2009, Dresden>
Conference Paper
Fraunhofer IAF ()
III-V Halbleiter; Heterostruktur; optische Spektroskopie; elektrische Eigenschaft; III-V semiconductor; heterostructure; optical spectroscopy; electrical property

We present large-area emitters based on GaInAsN which show efficient THz emission for excitation wavelengths up to 1.35 µm. The substrate material consists of a 1000 nm Ga1-yInyAs1-xNx (y = 0.11 and x = 0.04) layer grown by molecularbeam epitaxy on semi-insulating GaAs. On top there is an additional GaAs/Al0.3Ga0.7As heterostructure with thicknesses of 5 nm for the GaAs and 60 nm for the AlGaAs layer, respectively. Transmission measurements with a Fourier transform spectrometer reveal a bandgap corresponding to a wavelength of 1.5 µm. The resistance of a complete device with an active area of 1 mm2 is 0.3 M ohm. This allows operation with high bias fields (30 kV/cm) without being limited by heating.