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InAs/GaSb superlattice focal plane array infrared detectors: Manufacturing aspects

 
: Rutz, F.; Rehm, R.; Schmitz, J.; Fleissner, J.; Walther, M.; Scheibner, R.; Ziegler, J.

:

Andresen, B.F. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Infrared Technology and Applications XXXV : April 13-17, 2009, Orlando, FL, USA
Bellingham, WA: SPIE, 2009 (SPIE Proceedings Series 7298)
ISBN: 978-0-8194-7564-0
ISSN: 0277-786X
Paper 72981R
Conference "Infrared Technology and Applications" <35, 2009, Orlando/Fla.>
English
Conference Paper
Fraunhofer IAF ()
InAs/GaSb superlattice; MWIR; dual-color; multi-wafer MBE; III/V-process technology; ICP

Abstract
InAs/GaSb type-II short-period superlattice (SL) photodiodes have been shown to be very promising for 2nd and 3rd generation thermal imaging systems with excellent detector performance. A multi-wafer molecular beam epitaxy (MBE) growth process on 3"-GaSb substrates, which allows simultaneous growth on five substrates with excellent homogeneity has been developed. A reliable III/V-process technology for badge processing of single-color and dual-color FPAs has been set up to facilitate fabrication of mono- and bi-spectral InAs/GaSb SL detector arrays for the mid-IR spectral range. Mono- and bispectral SL camera systems with different pitch and number of pixels have been fabricated. Those imaging systems show excellent electro-optical performance data with a noise equivalent temperature difference (NETD) around 10 mK.

: http://publica.fraunhofer.de/documents/N-106496.html