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Silicon based trench hole power capacitor

: Berberich, S.E.; Dorp, J. vom; Bauer, A.J.; Ryssel, H.

EPE journal 19 (2009), No.2, pp.6-10
ISSN: 0939-8368
Journal Article
Fraunhofer IISB ()
power semiconductor device; passive component integration; monolithic power integration

In this work, we introduce a high voltage 3D-capacitor as a novel passive power device for a 400V application. This device is realized in silicon technology which allows high process reproducibility, high accuracy in capacitance values, and high quality of the dielectric layers (i.e., endurance at high electric field strengths). It can be manufactured discrete or as part of a monolithic integrated circuit. The outstanding properties of the device are a high ratio of capacitance value to consumed silicon area (capacitance enlargement of more than a factor of 16 in comparison to plane capacitors) and very stable capacitance values over a broad temperature range (i.e., average of 24ppm/°C from 20-175°C).