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Verfahren zur Herstellung einer Lotmetallisierung

Solder metallization i.e. gold-tin solder metallization, producing method for e.g. silicon substrate, involves removing current transport layer of metallization compound outside contact surface
 
: Hutter, M.; Engelmann, G.; Töpper, M.; Oppermann, H.

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Frontpage ()

DE 102008014577 A: 20080314
DE 102008014577 A: 20080314
H01L0021
German
Patent, Electronic Publication
Fraunhofer IZM ()

Abstract
(B3) Gegenstand der Erfindung ist ein Verfahren zur Herstellung mindestens einer Lotmetallisierung auf einer Oberflaeche eines Substrats, wobei das Verfahren folgende Schritte umfasst: a) Aufbringen eines ersten Metallisierungsverbunds; b) Aufbringen eines zweiten Metallisierungsverbunds; c) galvanisches Abscheiden der mindestens einen Lotmetallisierung; d) Entfernen von Teilen des ersten Metallisierungsverbunds.

 

DE 102008014577 B3 UPAB: 20090725 NOVELTY - The method involves applying a metallization compound comprising a current transport layer on a surface (1') of a substrate (1). A photoresist is applied on the metallization compound. A contact surface is formed by partial removal of the current transport layer. Another metallization compound is applied on the contact surface. The latter metallization compound is structured by a lift-off process. A solder metallization at the latter metallization compound is galvanically separated. The current transport layer of the former metallization compound is removed outside the contact surface. USE - Method for producing solder metallization i.e. gold-tin solder metallization, on a surface of a substrate e.g. silicon substrate and gallium arsenide substrate. ADVANTAGE - The method avoids wastage of material, and avoids difficulty in controlling process parameters, thus enabling adjustment of composition of the solder metallization in a simple manner. The galvanic separation on the metallization compound avoids the entire substrate from being covered. The galvanic separation enables effective adjustment of diameter, cross section and height of the solder metallization. The metallization compound can be structured in a better and controllable manner by the lift-off process such that the metallization compound remains only within the region of the contact surface. The metallization compound comprises an undercoating that serves as diffusion barrier layer to protect the substrate from damage.

: http://publica.fraunhofer.de/documents/N-106382.html