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Comparison of photoconductance- and photoluminescence-based lifetime measurement techniques

 
: Roth, T.; Rosenits, P.; Rüdiger, M.; Warta, W.; Glunz, S.W.

:
Postprint urn:nbn:de:0011-n-1063012 (590 KByte PDF)
MD5 Fingerprint: 556f70786d000945573100296e8c355a
© 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 1.9.2012


Faraone, L. ; Institute of Electrical and Electronics Engineers -IEEE-:
COMMAD 2008, Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings : 28 July - 1 August 2008, Sydney, Australia; In conjunction with the IUMRS-ICEM 2008 International Conference on Electronic Materials
Piscataway/NJ: IEEE, 2008
ISBN: 978-1-4244-2717-8
ISBN: 978-1-4244-2716-1
pp.249-252
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) <7, 2008, Sydney>
International Conference on Electronic Materials (ICEM) <2008, Sydney>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
Accurate measurements of the injection-dependent excess carrier lifetime of silicon samples are essential for device optimization and controlling of solar cell processes. This excess carrier lifetime directly reflects the quality of the used semiconductor material and passivation quality. In addition, the ability to measure these injection-dependent lifetimes at different temperatures is of great benefit for advanced lifetime spectroscopy. In this contribution different techniques for measuring the excess carrier lifetime of silicon samples will be compared. In detail microwave-detected photoconductance decay (mu W-PCD), transient and quasi-steady-state photoconductance (TR-PC and QSS-PC), and quasi-steady-state photoluminescence (QSS-PL) will be investigated. Special features and limitations of each technique will be presented and analyzed in detail using silicon samples covering an excess carrier lifetime range from several milliseconds to a few microseconds.

: http://publica.fraunhofer.de/documents/N-106301.html