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Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles

Vergleich ziwschen 65 nm Bulk- und PD-SOI-MOSFETs: Effekte der Grenzschicht zwischen Silcium und vergrabenem Oxid auf Punktdefekte und Dotierstoffprofile
 
: Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.

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Institute of Electrical and Electronics Engineers -IEEE-:
ESSDERC / ESSCIRC 2009 : Athens, 14-18 September 2009
New York, NY: IEEE, 2009
ISBN: 978-1-4244-4351-2
ISBN: 978-1-4244-4352-9
ISBN: 1-4244-4352-0
pp.292-295
European Solid-State Device Research Conference (ESSDERC) <39, 2009, Athen>
European Solid State Circuits Conference (ESSCIRC) <35, 2009, Athen>
English
Conference Paper
Fraunhofer IISB ()
SOI; MOSFET; point defects; doping

Abstract
In this work, the influence of the silicon/Buried OXide interface (Si/BOX) on the electrical characteristics of Silicon-On-Insulator (SOI) MOSFETs is investigated by means of numerical simulations. Considering the state-of-the-art dopant diffusion models and the effect of Si/BOX interface as a point defect sink, process simulations were performed to investigate the two-dimensional diffusion behaviour of the dopant impurities. The impact of the Si/BOX interface on the shape of the different active zones profiles was investigated by analyzing the standard electrical characteristics of CMOS devices. Finally, a new electrical characterization methodology is detailed to better analyze dopants lateral diffusion profiles.

: http://publica.fraunhofer.de/documents/N-106247.html