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Pulsed time-of-flight 3D-CMOS imaging using photogate-based active pixel sensors

 
: Spickermann, A.; Durini, D.; Bröcker, S.; Brockherde, W.; Grabmaier, A.

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ESSDERC / ESSCIRC 2009. CD-ROM : Conference Proceedings
New York, NY: IEEE, 2009
ISBN: 978-1-4244-4353-6
European Solid State Circuits Conference (ESSCIRC) <35, 2009, Athen>
English
Conference Paper
Fraunhofer IMS ()
time-of-flight; photogate APS; 3D-CMOS-imaging; pulsed laser

Abstract
A novel time-of-flight (ToF) 3D-image sensor based on photogate (PG) active pixel structures fabricated in a standard 0.35µm CMOS process is presented. Distance measurements are performed using a pulsed near-infrared (lambda=905nm) laser with pulse widths of 30ns to 60ns for distance measurements up to 9m. The developed ToF pixel consists of a photogate (APG=30x30µm²) and four floating diffusion (FD) readout nodes, which enable the detection of reflected laser pulse delay and efficient ambient light suppression. Our fabricated sensor contains 4x16 pixels and exhibits a dynamic range of 56dB and a noise equivalent power of 4.46W/m² using a single laser pulse.

: http://publica.fraunhofer.de/documents/N-105076.html