Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Application of He ion microscopy for material analysis

: Altmann, F.; Simon, M.; Klengel, R.


Postek, M.T. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Scanning microscopy 2009 : 4 - 7 May 2009, Monterey, California, USA
Bellingham, WA: SPIE, 2009 (SPIE Proceedings Series 7378)
ISBN: 978-0-8194-7654-8
Scanning Microscopy Meeting <2009, Monterey/Calif.>
Conference Paper
Fraunhofer IWM ()
helium ion beam microscopy; scanning microscopy; material analysis; microelectronics; polymer electronic

Helium ion beam microscopy (HIM) is a new high resolution imaging technique. The use of Helium ions instead of electrons enables none destructive imaging combined with contrasts quite similar to that from Gallium ion beam imaging. The use of very low probe currents and the comfortable charge compensation using low energy electrons offer imaging of none conductive samples without conductive coating. An ongoing microelectronic sample with Gold/Aluminum interconnects and polymer electronic devices were chosen to evaluate HIM in comparison to scanning electron microscopy (SEM). The aim was to look for key applications of HIM in material analysis. Main focus was on complementary contrast mechanisms and imaging of none conductive samples.