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The impacts of dimensions and return current path geometry on coupling in single ended through silicon vias

: Curran, B.; Ndip, I.; Guttowski, S.; Reichl, H.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 59th Electronic Components and Technology Conference, ECTC 2009. Vol.3 : San Diego, CA, USA, 26 - 29 May 2009
New York, NY: IEEE, 2009
ISBN: 978-1-4244-4475-5
ISBN: 978-1-4244-4476-2
Electronic Components and Technology Conference (ECTC) <59, 2009, San Diego/Calif.>
Conference Paper
Fraunhofer IZM ()
crosstalk; signal-integrity; 3D-Integration; silicon based module

Through Silicon Vias (TSVs) are expected to play an increasingly important role in next-generation microelectronics packaging. Even when the challenge of attenuation is overcome, crosstalk remains a major concern in TSV design. In this paper, it is shown that, at frequencies above 20 GHz, near-end crosstalk can easily exceed -20 dB. Traditional analytical models for crosstalk are compared to full-wave simulations to determine their limitations and a lumped element equivalent circuit model is presented. An examination of the impact of TSV dimensions is presented. Then, three TSV structures are compared and the impact of their dimensions on crosstalk is investigated.