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Multiple-throw millimeter-wave FET switches for frequencies from 60 up to 120 GHz

: Kallfass, I.; Diebold, S.; Massler, H.; Koch, S.; Seelmann-Eggebert, M.; Leuther, A.


Gallium Arsenide Application Symposium Association -GAAS-; Institute of Electrical and Electronics Engineers -IEEE-; European Microwave Association:
3rd European Microwave Integrated Circuits Conference 2008. Proceedings : Held in Amsterdam, from 27 to 31 October 2008 as part of European Microwave Week 2008, EuMW
New York, NY: IEEE, 2008
ISBN: 978-2-87487-007-1
European Microwave Integrated Circuits Conference (EuMIC) <3, 2008, Amsterdam>
European Microwave Week (EuMW) <11, 2008, Amsterdam>
Conference Paper
Fraunhofer IAF ()

This paper presents the design and performance of various millimeter-wave FET switches realized in a metamorphic HEMT technology. The single-pole multi-throw switch configurations are targeting wireless communication frontends and imaging radiometers at 60, 94 and 120 GHz. In SPDT switches, state-of-the-art insertion loss of 1.4 and 1.8 dB is achieved at 60 and 94 GHz, respectively. Rivalled only by PIN diode switches, an insertion loss of < 2dB is demonstrated up to 120 GHz. Shorted stubs are used to compensate for parasitic FET capacitance and allow for matching. Linearity data is presented for 60 and 94 GHz SPDT switches. A comprehensive comparison with state-of-the-art planar SPDT switches is included. A 2:6 switch network for multi-antenna transceivers achieves < 4dB insertion loss at 60 GHz.