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Diode laser arrays for 1.8 to 2.3 µm wavelength range

 
: Kelemen, M.T.; Gilly, J.; Haag, M.; Biesenbach, J.; Rattunde, M.; Wagner, J.

:

Belyanin, A.A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Novel in-plane semiconductor lasers VIII : 26 - 29 January 2009, San Jose, California, United States
Bellingham, WA: SPIE, 2009 (Proceedings of SPIE 7230)
ISBN: 978-0-8194-7476-6
Paper 72301K
Conference "Novel In-Plane Semiconductor Lasers" <8, 2009, San Jose/Calif.>
English
Conference Paper
Fraunhofer IAF ()

Abstract
High-power diode lasers in the mid-infrared wavelength range between 1.8µm and 2.3µm have emerged new possibilities for application fields like materials processing, medical surgery and for military applications like infrared countermeasures. GaSb based diode lasers are naturally predestined for this wavelength range and offer clear advantages in comparison to InP based diode lasers in terms of output power and wall-plug efficiency. We will present results on different MBE grown (AlGaIn)(AsSb) quantum-well diode laser single emitters and linear laser arrays, the latter consisting of 19 emitters on a 1 cm long bar, emitting at different wavelengths between 1.8 and 2.3 µm. Each emitter has a resonator length of 1.0 mm or 1.5 mm and stripe widths of 90 µm or 150 µm. The distance from emitter to emitter is 500µm for both types, resulting in 20% and 30% fill factors. For single emitters the electrooptical and beam behaviour and the wavelength tunability by current and temperature have been carefully investigated in detail. For diode laser arrays mounted on actively cooled heat sinks, nearly 20W at 1.94µm in continuous-wave mode have been achieved at a heat sink temperature of 20 °C. Even at 2.2µm more than 15W with a wall plug efficiency of 23% have been measured, impressively demonstrating the potential of GaSb based diode lasers well beyond wavelengths of 2µm.

: http://publica.fraunhofer.de/documents/N-103550.html