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Transport properties of doped, nanostructured IV-VI epitaxial films grown by MBE

: Koenig, J.D.; Winkler, M.; Boettner, H.


Journal of Electronic Materials 38 (2009), No.7, pp.1418-1422
ISSN: 0361-5235
ISSN: 1543-186X
Journal Article
Fraunhofer IPM ()
thermoelectric; PbTe; MBE; nanocomposite

Here we report on the first results of PbTe epitaxial films with high Bi content above doping concentrations grown on BaF2 in order to obtain nanoscale precipitates. The crystal structure is investigated by x-ray diffraction (XRD) measurements and no other phases than well-oriented PbTe could be found. These layers have been investigated by Hall-effect and Seebeck-effect measurements. The dependence of the Seebeck coefficient on the carrier concentration cannot be explained by simple Boltzmann statistics. Fourier-transform infrared (FTIR) transmission spectra also show some irregularities. These phenomena are interpreted as hints to nanoscale inclusions. The thermal conductivity is measured with the time-domain thermal reflectance method, developed by D. Cahill, to complete the thermoelect ric characterizations.