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Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight

: Guter, W.; Schöne, J.; Philipps, S.P.; Steiner, M.; Siefer, G.; Wekkeli, A.; Welser, E.; Oliva, E.; Bett, A.W.; Dimroth, F.


Applied Physics Letters 94 (2009), No.22, Art. 223504, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer ISE ()

A metamorphic Ga0.35In0.65P/Ga0.83In0.17As/Ge triple-junction solar cell is shown to provide current-matching of all three subcells and thus composes a device structure with virtually ideal band gap combination. We demonstrate that the key for the realization of this device is the improvement of material quality of the lattice-mismatched layers as well as the development of a highly relaxed Ga1-yInyAs buffer structure between the Ge substrate and the middle cell. This allows the metamorphic growth with low dislocation densities below 10(6) cm(-2). The performance of the approach has been demonstrated by a conversion efficiency of 41.1% at 454 suns (454 kW/m(2), AM1.5d ASTM G173-03).