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A model of self-limiting residual acid diffusion for pattern doubling

: Fuhrmann, J.; Fiebach, A.; Uhle, M.; Erdmann, A.; Szmanda, C.R.; Truong, C.


Raptis, I.:
34th International Conference on Micro- and Nano-Engineering, MNE 2008 : September 15 - 18, 2008, Athens, Greece
Amsterdam: Elsevier, 2009 (Microelectronic engineering 86.2009, Nr.4-6)
ISSN: 0167-9317
International Conference on Micro- and Nano-Engineering (MNE) <34, 2008, Athens>
Conference Paper, Journal Article
Fraunhofer IISB ()

Pattern doubling by cross-linking of a spacer triggered by residual acid diffusion from a previously developed primary structure into the spacer is a possible option to create the necessary structure widths for the 32 nm node with current exposure technology by pattern doubling. A particular advantage of this process step would be the self-alignment to the primary structure, which would render a second exposure step unnecessary. In the paper, we present a new prototypical model of the bake step of this process and discuss the dependency of the desired behavior on parameters of the model.