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A 200 GHz monolithic integrated power amplifier in metamorphic HEMT technology

 
: Kallfass, I.; Pahl, P.; Massler, H.; Leuther, A.; Tessmann, A.; Koch, S.; Zwick, T.

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IEEE microwave and wireless components letters 19 (2009), No.6, pp.410-412
ISSN: 1051-8207
ISSN: 1531-1309
English
Journal Article
Fraunhofer IAF ()
G-Band; MHEMT; millimeter-wave field effect transistor; FET; integrated circuit; IC; millimeter-wave power amplification; monolithic microwave integrated circuit; MMIC

Abstract
A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 186 and 212 GHz is presented. The amplifier, dedicated to high-resolution imaging radar and communication systems, is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. The three-stage design with four parallel transistors in the output stage achieves a linear gain of more than 12 dB and provides a saturated output power of more than 9 dBm and 7 dBm at 192 and 200 GHz, respectively.

: http://publica.fraunhofer.de/documents/N-101705.html