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Lanthanum implantation for threshold voltage control in metal/high-k devices

: Fet, A.; Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.


Robertson, J.:
16th Biennial Conference on Insulating Films on Semiconductors 2009. Proceedings : 28 June - 1 July 2009, Cambridge University, United Kingdom
Amsterdam: Elsevier, 2009 (Microelectronic engineering 86.2009, Nr.7-9)
ISSN: 0167-9317
Biannual Conference of Insulating Films on Semiconductors (INFOS) <16, 2009, Cambridge>
Conference Paper, Journal Article
Fraunhofer IISB ()

In this paper the tuning of the n-metal effective work function by implantation of lanthanum is demonstrated. The effect of implantation and thermal annealing on the device flat-band voltage is presented. It is shown that lanthanum doping of the gate stack produces a negative shift of the flat-band voltage of -0.53 V for a lanthanum does of 5 x 10(14) cm(-2), after the device undergoes S/D anneal conditions. The results are discussed within the framework of a phenomenological dipole model and compared with other results.