Partial pressure of phosphorus and arsenic vapor measured by raman scattering

In-situ Raman scattering results on vapor of phosphorus and arsenic at temperatures up to 1400 K are presented. The ration of the Raman intensites of different species in the gas is proportional to the ration of the corresponding partial pressure. The results of this new method for measuring partial pressures will be compared with thermodynamical calculations. The presented method allows the on line monitoring of the vapor atmosphere during crystal growth of annealing processes, which may be important for optimizing growth conditions, doping by the gas phase or quality optimizing of wafers.