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Polytype dependence of transition metal-related deep levels in 4H-, 6H-, and 15R-SiC

 
: Grillenberger, J.; Achtziger, N.; Pasold, G.; Witthuhn, W.

Yoshida, S.:
Silicon carbide and related materials 2001. Pt.1 : Proceedings of the International Conference on Silicon Carbide and Related Materials - 2001, Tsukuba, Japan, October 28 - November 2,2001
Zürich-Uetikon: Trans Tech Publications, 2002 (Materials Science Forum 389/393)
ISBN: 0-87849-894-X
pp.573-576
International Conference on Silicon Carbide and Related Materials (ICSCRM) <2001, Tsukuba>
English
Conference Paper
Fraunhofer IIS A ( IIS) ()

Abstract
We present an extensive data set on deep states of the transition metals Ti, V, Cr, Ta, and W in the bandgap of the three SiC-polytypes 4H, 6H, and 15R. The data are compared with theoretical predictions for 3C-SiC. The influence of inequivalent lattice sites in Silicon Carbide on the level energies is discussed.

: http://publica.fraunhofer.de/documents/B-83989.html