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Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices

 
: Herden, M.; Bauer, A.J.; Ryssel, H.

:

Microelectronics reliability 40 (2000), No.4-5, pp.633-636
ISSN: 0026-2714
English
Journal Article
Fraunhofer IIS B ( IISB) ()

: http://publica.fraunhofer.de/documents/B-78464.html