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2001
Conference Paper
Titel
Power efficiency of GaSb based 2.0 µm diode lasers
Alternative
Leistungseffizienz GaSb-basierenden Diodenlasern mit einer Wellenlänge von 2.0 µm
Abstract
A model was developed to describe the power efficiency of ridge waveguide lasers as a function of intrinsic laser parameters. Molecular beam epitaxy was used to fabricate the samples for quantum well (QW) diode lasers. The laser facets were high-reflection/anti-reflection coated and were mounted p-side down to improve heat sinking. Thermal resistance was found to decrease from 73K/W to 8K/W for the device with p-side down mounting.
Author(s)