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Industrial application of heterostructure device simulation

Industrielle Anwendung der Simulation von Heterostrukturbauelementen
: Palankovski, V.; Quay, R.; Selberherr, S.


IEEE journal of solid-state circuits 36 (2001), No.9, pp.1365-1370
ISSN: 0018-9200
Journal Article
Fraunhofer IAF ()
heterojunction bipolar transistor; high electron mobility transistor; semiconductor device modeling; semiconductor heterojunction; simulation software; HBT; HEMT; Halbleiterbauelementmodellierung; Halbleiter-Heteroübergang; Simulationssoftware

We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic simulations of heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) with MINIMOS-NT are presented in good agreement with measured data. The simulation examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.