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Complete monolithic integrated 2.5 Gbit/s optoelectronic receiver with large area MSM photodiode for 850 nm wavelength

Vollständig monolithisch integrierter2.5 Gb/s optoelektronischer Empfänger mit großer MSM Photodiode für 850nm Wellenlänge
: Lang, M.; Bronner, W.; Benz, W.; Ludwig, M.; Hurm, V.; Kaufel, G.; Leuther, A.; Rosenzweig, J.; Schlechtweg, M.


Electronics Letters 37 (2001), No.20, pp.1247-1249
ISSN: 0013-5194
Journal Article
Fraunhofer IAF ()

A novel optoelectronic receiver chip for a data rate of 2.5Gbit/s has been developed and tested. It integrates a metal- semiconductor-metal photodiode with a GaAs HEMT transimpedance amplifier, a high gain amplifier and a limiting output buffer which is able to drive a 50 Ohm load. A special feature of the chip is that it comprises a very large photodiode of 300 mu m diameter, eliminating the need for expensive fibre alignment. Measurements reveal that the receiver achieves the required sensitivity of -15.7dBm at a bit error rate of 10(exp -9).