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Influence of alpha particle bombardment and postannealing on photoluminescence from GaAs/Al(0.35)Ga(0.65)As multiple quantum wells

Einfluß des Beschusses mit Alpha-Teilchen und anschliebender Temperung auf der Photolumineszenz von GaAs/Al(0.35)Ga(0.65)As Vilefachquantenfilmen
: Kundrotas, J.; Dargys, A.; Valusis, G.; Asmontas, S.; Köhler, K.; Leroy, C.


Journal of applied physics 89 (2001), No.11, pp.6007-6012
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; quantum well; Quantenfilm; photoluminescence; Photolumineszenz; cyclotron resonance; Zyklotronenresonanz

Multiple quantum well (MQW) samples grown by the molecular beam epitaxy method were irradiated by alpha particles from isotope 239.Pu. The photoluminescence (PL) spectra and PL integrated intensity dependencies are presented at various alpha particle fluences, up to 10(exp 11) cm(exp -2). The experimental results are in agreement with a model which assumes that point centers (residual impurities and point defects introduced during irradiation) are responsible for PL intensity decrease with the alpha particle fluence. It was found that annealing of irradiated MQW samples at a temperature above 650 K nearly restores the PL intensity. An enhancement of PL by more than an order of magnitude was observed at annealing temperatures higher than 850 K, just before GaAs and Al(0.35)Ga(0.65)As interdiffusion begins.