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Changes of MQW photoluminescence under alpha particle irradiation

Änderung der MQW-Photolumineszenz durch Alpha-Teilchen-Bestrahlung
: Kundrotas, J.; Dargys, A.; Valusis, G.; Asmontas, S.; Granja, C.; Pospisil, S.; Köhler, K.


Superlattices and Microstructures 29 (2001), No.4, pp.281-286
ISSN: 0749-6036
ISSN: 1096-3677
Journal Article
Fraunhofer IAF ()
alpha particle; luminescence; multiple quantum wells; radiation detector; III-V semiconductor; III-V Halbleiter; Quantenfilm; photoluminescence; Photolumineszenz

Undoped multiple quantum well (MQW) samples grown by the molecular beam epitaxy method were irradiated by 5.15 MeV energy alpha particles. A strong influence of irradiation on the photoluminescence (PL) intensity was observed in these nearly intrinsic samples: the PL intensity at liquid nitrogen and room temperatures decreased by more than two orders of magnitude at alpha particle fluence of 10(exp 11) cm(exp -2). The dependence of the PL intensity on irradiation dose is described by a rate equation model that takes into account the generation of nonradiative point centers in barriers and wells of the MQW structure during irradiation.