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Filling-factor-dependent electron correlations observed in cyclotron resonance

Füllfaktorabhängige Elektronenkorrelationen beobachtet in Zyklotronresonanz
: Manger, M.; Batke, E.; Hey, R.; Friedland, K.J.; Köhler, K.; Ganser, P.


Physical Review. B 63 (2001), No.12, Art. 121203, 4 pp.
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Journal Article
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; quantum well; Quantenfilm; cyclotron resonance; Zyklotronenresonanz

Cyclotron resonances of electron space-charge layers in GaAs were studied at 3.He temperatures covering a density regime from 2 to 13 x 10(exp 11) cm(exp -2). For densities higher than about 6 x 10(exp 11) cm(exp -2) many-body influences are sufficiently reduced such that line splittings due to band-structure influences were involved. At integer filling factors the spin-up and spin-down electrons are not completely decoupled as predicted by theory. Inter Landau-level optical gaps are renormalized at odd fillings, and there is a correlation gap between spin- and charge-density excitations in the long-wavelength limit.