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  4. Filling-factor-dependent electron correlations observed in cyclotron resonance
 
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2001
Journal Article
Title

Filling-factor-dependent electron correlations observed in cyclotron resonance

Other Title
Füllfaktorabhängige Elektronenkorrelationen beobachtet in Zyklotronresonanz
Abstract
Cyclotron resonances of electron space-charge layers in GaAs were studied at 3.He temperatures covering a density regime from 2 to 13 x 10(exp 11) cm(exp -2). For densities higher than about 6 x 10(exp 11) cm(exp -2) many-body influences are sufficiently reduced such that line splittings due to band-structure influences were involved. At integer filling factors the spin-up and spin-down electrons are not completely decoupled as predicted by theory. Inter Landau-level optical gaps are renormalized at odd fillings, and there is a correlation gap between spin- and charge-density excitations in the long-wavelength limit.
Author(s)
Manger, M.
Batke, E.
Hey, R.
Friedland, K.J.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ganser, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Physical Review. B  
DOI
10.1103/PhysRevB.63.121203
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • III-V semiconductor

  • III-V Halbleiter

  • quantum well

  • Quantenfilm

  • cyclotron resonance

  • Zyklotronenresonanz

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