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  4. ITO films deposited by dual magnetron sputtering (DMS) system using oxide targets
 
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2000
Conference Paper
Title

ITO films deposited by dual magnetron sputtering (DMS) system using oxide targets

Abstract
Sn-doped In2O3 (ITO) films were deposited by dual magnetron sputtering (DMS) system using twin high density ITO oxide targets at substrate temperature (Ts) of RT and 300°C under Ar + O2 gas pressure of 1.0 Pa. No nodules or defects were observed on the target surface after 3000 W, 100 h deposition implying the outstanding micro-arc free and long term process stability. The DMS is considered to have very high potential for the stable, high-power density and high-deposition rate sputtering processes using oxide targets.
Author(s)
Shin, N.
Kon, M.
Song, P.K.
Shigesato, Y.
Frach, P.
Kojima, H.
Suzuki, K.
Utsumi, K.
Mainwork
Advanced coatings on glass & plastics for large-area or high-volume products. Proceedings of the 3rd International Conference on Coatings on Glass 2000  
Conference
International Conference on Coatings on Glass (ICCG) 2000  
Language
English
Fraunhofer-Institut für Organische Elektronik, Elektronenstrahl- und Plasmatechnik FEP  
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