ITO films deposited by dual magnetron sputtering (DMS) system using oxide targets

Sn-doped In2O3 (ITO) films were deposited by dual magnetron sputtering (DMS) system using twin high density ITO oxide targets at substrate temperature (Ts) of RT and 300°C under Ar + O2 gas pressure of 1.0 Pa. No nodules or defects were observed on the target surface after 3000 W, 100 h deposition implying the outstanding micro-arc free and long term process stability. The DMS is considered to have very high potential for the stable, high-power density and high-deposition rate sputtering processes using oxide targets.