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Nondestructive analytical tools for characterization of thin titanium silicide films prepared by conventional and direct step silicidation with enhanced transition

: Kal, S.; Ryssel, H.


Journal of the Electrochemical Society 146 (1999), No.9, pp.3440-3447
ISSN: 0013-4651
Journal Article
Fraunhofer IIS B ( IISB) ()
ellipsometry; metallic thin films; nondestructive testing; transmission electron microscopy; x-ray diffraction

Nondestructive analytical tools (e.g., spectral ellipsometry, thermal wave analysis, atomic force analysis, etc.) have been used to characterize thin titanium silicide films. The parameters of silicide films (layer thickness, uniformity, phase transition, etc.) obtained using nondestructive tools are compared using traditional analytical techniques including four-point probe, X-ray diffraction, and cross-sectional transmission electron microscopy. Properties of thin TiSi2 films prepared by an advanced one-step annealing process featured by direct step silicidation with enhanced transition has been compared with that obtained from a conventional two-step annealing process. This process produces thin TiSi2 films with improved surface roughness without causing the agglomeration and uncompleted phase transition failure. Optical properties such as refractive indexes, reflectivity, and dielectric constants of the thin TiSi2 films as obtained from spectroscopic ellipsometer measurements are reported in the wavelength range 0.25-0.90 mu m.