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Reliability of metal-oxide-semiconductor capacitors on pH-silicon carbide

 

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Microelectronic engineering 48 (1999), No.1-4, pp.253-256
ISSN: 0167-9317
Conference on Insulating Films on Semiconductors <11, 1999, Kloster Banz>
English
Conference Paper
Fraunhofer IIS B ( IISB) ()
MOS capacitor; semiconductor device breakdown; raman silicon anisotropy; semiconductor device reliability; silicon compounds; wide band gap semiconductors

Abstract
In this paper the long term stability of polysilicon gated MOS capacitors on 6H-SiC is characterized by voltage ramping, constant current stress and the corresponding charge-to-breakdown values.

: http://publica.fraunhofer.de/documents/B-62492.html