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Application and cost analysis of scatterometry for integrated metrology

: Benesch, N.; Schneider, C.; Pfitzner, L.; Ryssel, H.

Amberiadis, K. ; European Optical Society -EOS-; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
In-line characterization, yield reliability, and failure analyses in microelectronic manufacturing : 19-21 May 1999, Edinburgh
Bellingham/Wash.: SPIE, 1999 (SPIE Proceedings Series 3743)
ISBN: 0-8194-3223-7
Conference on In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing <1999, Edinburgh>
Conference Paper
Fraunhofer IIS B ( IISB) ()
cost-benefit analysis; integrated circuit manufacture; integrated circuit measurement; integrated circuit testing; light scattering; spatial variables measurement; thickness measurement

In semiconductor manufacturing there is a great demand for innovations towards higher cost-effectiveness. The increasing use of integrated metrology is one means to improve manufacturing processes effectively and, hence, to lower costs. Especially for the 300 mm technology, a substantial reduction of costly monitor wafers is required. Moreover, misprocessing has to be reduced by efficient feedback process control. Scatterometry can be a versatile technique for these tasks. In order to define the requirements on integrated scatterometric metrology, a cost and break-even analysis is carried out first. Several conclusions are drawn from the economic analysis to determine appropriate arrangements for scatterometric intensity measurements. The evaluation of intensity signatures measured at a fixed angle of incidence is demonstrated to be a valuable tool for the in-line characterization of critical dimensions and layer thickness.