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  4. Measuring acid generation efficiency in chemically amplified resists with all three beams
 
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1999
Journal Article
Title

Measuring acid generation efficiency in chemically amplified resists with all three beams

Abstract
A method for measuring acid generation efficiency is presented and utilized to determine the relative efficiency of four photoacid generators (PAGs) upon radiation with photon, electron, and ion beams. In this method, chemically amplified resists are prepared with varying amounts of base, coated into thin films (1000 AA), and exposed. Linear plots of the base concentration against the threshold exposure dose for each resist yield the threshold acid concentration and the acid generation rate constant for each PAG. The acid-generating efficiency of the four PAGs (ND-Tf, TPS-Tf, TBI-PFOS, and TBI-Tf) upon irradiation with DUV (248 nm), EUV (13.4 nm), X-ray (1 nm), e beam (30 and 50 keV), and He+ ions is evaluated.
Author(s)
Szmanda, C.S.
Brainard, R.L.
Mackevich, J.F.
Awaji, A.
Tanaka, T.
Yamada, Y.
Bohland, J.
Tedesco, S.
Dal'Zotto, B.
Brünger, W.H.
Torkler, M.
Fallmann, W.
Löschner, H.
Käsmaier, R.
Nealey, P.M.
Pawloski, A.R.
Journal
Journal of vacuum science and technology B. Microelectronics and nanometer structures  
Conference
International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication 1999  
DOI
10.1116/1.591011
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Keyword(s)
  • resists

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