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Resolution improvement of ion projector with a low energy spread multicusp ion source



Hove, L. van den; Rossum, M. van; Ronse, K.:
Micro- and nanoengineering 98 - MNE
Amsterdam: Elsevier, 1999 (Microelectronic engineering 46.1999)
International Conference on Micro- and Nanofabrication (MNE) <1998, Louvain/Belgium>
Conference Paper
Fraunhofer ISIT ()
aberration; ion beam lithography; ion source

A new multicusp ion source developed by the Lawrence Berkeley Laboratory has been implemented into the ion projector of the Fraunhofer institute ISiT in Berlin. This source with low energy spread of 2eV reduces chromatic aberration so that 50 nm lines can be printed with an exposure dose of 0.3 mu C/cm2 of 75 keV He+ ions into standard 300 nm thick DUV resist (Shipley UV II HS).