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In-plane strain and strain relaxation in laterally patterned periodic arrays of protect (Si/SiGe) quantum wires and dot arrays



Applied Physics Letters 73 (1998), No.6, pp.806-808
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IZFP ()

The depth dependent strain relaxion in photolithographically defined and reactive ion etched Si/SiGe quantum wire and dot arrays is determined by high resolution grazing incidence x-ray diffraction. The laterally periodic structures were aligned along two orthogonal [110] and [110] directions on the (001) surface. By recording reciprocal space maps around the (220) and (220) reciprocal lattice points, the shape and in-plane strain could be determined independently of each other. Using triple axis diffractometry and changing the effective penetration depth of the x-ray radiation between 5 and 300 nm the strain relaxation in the wires and dots could be determined depth resolved.