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Mode conversion in GaN based laser structures on sapphire due to the birefringence of the nitrides

Modenkonversion in GaN-basierenden Laserstrukturen auf Saphir auf Grund der Doppelbrechung der Nitride
: Heppel, S.; Wirth, R.; Off, J.; Scholz, F.; Hangleiter, A.; Obloh, H.; Wagner, J.; Kirchner, C.; Kamp, M.


Physica status solidi. A 176 (1999), 1, pp.73-77 : Ill., Lit.
ISSN: 0031-8965
ISSN: 1862-6300
Journal Article
Fraunhofer IAF ()
group III-nitrides; Gruppe III-Nitride; semiconductor laser; Halbleiter-Laser; blue laser; blaue Laser; mode coupling; Modenkopplung

In this paper, we present our investigations of the waveguiding properties of various GaInN/GaN-DH and laser structures; particularly with regard to the influence of the substrate. Due to the small refractive index of sapphire and the neccessity of a thick GaN buffer, several higher order modes (up to 30) are guided in a complete laser structure on sapphire. This and the fact, that the nitrides are birefringent, lead to mode coupling phenomena. To support our experimental results we performed calculations with a 4 x 4 transfer-matrix method, taking into account the birefringence of the material. The results are in good qualitative agreement with our experimental data.